Chip-on-chip structure and methods of manufacture

ABSTRACT

Sintered connection structures and methods of manufacture are disclosed. The method includes placing a powder on a substrate and sintering the powder to form a plurality of pillars. The method further includes repeating the placing and sintering steps until the plurality of pillars reach a predetermined height. The method further includes forming a solder cap on the plurality of pillars. The method further includes joining the substrate to a board using the solder cap.

FIELD OF THE INVENTION

The invention relates to semiconductor structures and, moreparticularly, to sintered connection structures and methods ofmanufacture.

BACKGROUND

Current solder bump connection technologies can be costly and arelimited by masking and plating processes. For example, fabricationprocesses constrain the thickness of copper pillars to about 75 um talldue to the aspect ratio of the photoresist expose and strip process.

SUMMARY

In an aspect of the invention, a method comprises placing a powder on asubstrate and sintering the powder to form a plurality of pillars. Themethod further comprises repeating the placing and sintering steps untilthe plurality of pillars reach a predetermined height. The methodfurther comprises forming a solder cap on the plurality of pillars. Themethod further comprises joining the substrate to a board using thesolder cap.

In an aspect of the invention, a method comprises: placing a wafer in achuck and coating the wafer with a plurality of layers of conductivepowder, followed by a laser sintering after each coating to formconductive pillars of a predetermined height; forming a solder cap, onthe conductive pillars; removing non-sintered powder by a cleaningprocess; joining a chip to the wafer between the conductive pillars; andjoining the wafer to a board by a bonding process of the solder cap ofthe conductive pillars to the board.

In an aspect of the invention, a structure comprises: a plurality ofsintered copper pillars with a solder cap, comprising a height ofapproximately 75 μm or greater on a wafer; a chip joined to the wafer,between a plurality of sintered copper pillars; a laminate board joinedto the wafer by the solder cap of the plurality of sintered copperpillars or other conductive material; and an underfill material bondingthe chip, the wafer and the laminate board.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention is described in the detailed description whichfollows, in reference to the noted plurality of drawings by way ofnon-limiting examples of exemplary embodiments of the present invention.

FIGS. 1-5 show fabrication processes and respective structures inaccordance with aspects of the invention.

FIG. 6 shows fabrication processes and a respective structure inaccordance with additional aspects of the invention.

FIG. 7 shows fabrication processes and a respective structure inaccordance with additional aspects of the invention.

DETAILED DESCRIPTION

The invention relates to semiconductor structures and, moreparticularly, to sintered connection structures and methods ofmanufacture. In more specific embodiments, the connection structures arefine pitched structures, which enable chip beneath chip stacking. Ineven more specific embodiments, the fine pitched structures are pillarswith higher standoff (than conventional structures) to allow additionaljoining of chips. The pillars can be copper pillars with a solder cap,fabricated using fine pitch selective laser sintering (e.g., a versionof 3D printing). In embodiments, the pillars can also be composed ofalloys, with multiple heights and shapes.

In embodiments, the connection structures described herein can be usedfor under bump metallurgy (UBM) deposition, amongst other structures. Infurther embodiments, the fabrication processes and resulting structurescan be used to form discrete devices such as inductors, resistors, RFantennas and RF shielding, as well as micro bump printing for stackedchips.

Advantageously, the fabrication processes enable formation of pillarsthat extend beyond 75 um in height, up to approximately 500 um in heightor more. In fact, the fabrication processes and resulting structuresprovide controlled bump profiles for strain reduction. Also, thefabrication processes allow for controlled (e.g., software controlled)printing of binary and trinary metal systems on the wafer withoutadditional plating steps, e.g., eliminating the need for masking andlithography processes. Accordingly, the fabrication processes describedherein significantly reduce overall fabrication costs and time. Also,the fabrication processes described herein provide the ability toselectively develop different sized and shaped solder bumps on the samewafer.

FIG. 1 shows a structure and respective fabrication processes inaccordance with aspects of the invention. The structure 10 includes awafer or substrate 12 mounted in a chuck 14. In embodiments, thesubstrate 12 can be a semiconductor material composed of any suitablematerial including, but not limited to, Si, SiGe, SiGeC, SiC, Ge alloys,GaAs, InAs, InP, and other III/V or II/VI compound semiconductors.

As further shown in FIG. 1, a powder 16 is formed on the substrate 12.In embodiments, the powder 16 is a copper powder; however, the presentinvention contemplates the use of any conductive material such astungsten or other metals or metal alloys. In further embodiments, thepowder 16 can be an insulator material or even a polymer or nylon asexamples. The powder 16 can be deposited to a thickness from about 1micron to about 25 microns or more in each pass, and preferably about 5microns in height. Subsequent to each coating of the powder deposition,a software controller laser 20 sinters portions of the powder to formpillars 18. In embodiments, the sintering is provided in an inertatmosphere.

The pillars 18 can be approximately 5 microns to greater than 200microns in diameter and, in embodiments, can be provided in manydifferent shapes as described further herein. In embodiments, the laser20 can be a CO₂ laser or Yb laser, as examples, with a pulse of power orenergy high enough to sinter the powder to form the pillars 18. Inembodiments, the power or energy of the pulse should melt but not reflowthe powder 16, noting that the power or energy of the pulse will thusvary depending on the material of the powder.

As further shown in FIG. 2, additional powder 16 is formed on thesubstrate 12. The powder 16 can be deposited to an additional thicknessfrom about 3 microns to about 25 microns in this pass, and preferablyabout 5 microns in height. Subsequent to the powder deposition, thelaser 20 can sinter portions of the additional powder to continue theformation of the pillars 18 to a greater height, as already describedherein. In embodiments, the deposition and sintering processes cancontinue until the pillars extend beyond 75 um in height, up toapproximately 500 um in height, which can enable a chip under chipconfiguration.

In FIG. 3, additional powder 22 is formed on the upper layer of thepowder 16. In specific embodiments, the additional powder 22 is a solderpowder coated on the powder 16. As previously described, the additionalpowder 22 undergoes a sintering process. This sintering process willform a solder connection 24. The solder connection 24 can be of varyingheight, depending on the particular application.

In FIG. 4, any non-sintered powder (e.g., powder 16 and powder 22) isremoved using conventional processes. For example, the non-sinteredpowder can be removed by a cleaning process such as a blowing process.After the removal of the non-sintered powder, pillars 25 will remain onthe substrate 12. In embodiments, the pillars 25 can be a combination ofmaterials formed to a height of approximately 500 um or more, which isnot possible with conventional plating processes.

After a desired height is obtained, the structure will undergo a reflowprocess to round the pillars 25 and, more particular, to form a soldercap 24′ (e.g., solder cap). The wafer can then be diced to form separatechips 26. In embodiments, the dicing can be performed in anyconventional manner, e.g., scribing and breaking, by mechanical sawingor by laser cutting.

In FIG. 5, a chip 28 is bonded to the chip 26 between the pillars 25. Inembodiments, the chip 28 includes plating of micro-bumps consisting ofeither traditional C4 or copper pillars designated at reference numeral30. The chip 28 can be bonded to the substrate 12 by a reflow of the C4solder connection or thermocompression bonding connection, on a sameside of the chip 26 as the pillars 25. The chip 26 is then joined to alaminate, e.g., board 32, by the solder cap 24′ (with the chip 28 bondedbetween the pillars 25). In embodiments, the board 32 can be an organiclaminate and the bonding can be provided by a reflow of the solder cap24′ at a reflow temperature of less than 300° C. and more specificallyat a temperature which will not melt the copper pillar, e.g., about 250°C. to about 260° C.

In embodiments, due to the increased height of the pillars 25, thepillars 25 can be used to provide stress relieve (e.g., absorb stress)resulting from coefficient thermal expansion (CTE) mismatch between thechip 26 and the board 32. Drop test results will also be improved by theincreased pillar height. That is, the pillars 25 will provide strainreduction. In optional embodiments, an underfill 34 can be added forimproved reliability; that is, an epoxy or other paste 34 can providedbetween the chip 28, chip 26 and board 32.

FIG. 6 shows fabrication processes and a respective structure inaccordance with additional aspects of the invention. In this structure10′, the pillars 25′ can be cone or tapered shaped with a largerdiameter “x” at the base and a narrower section “y” at the solder cap24′. In embodiments, the ratio of x:y can be about 2:1. The shape of thepillars 25′ can further reduce the stress in the chip back end of theline (BEOL) by increasing the area of chip interconnect and increasingbump height, while enabling increased routing density in the laminate(board 32). As shown and described with respect to FIG. 5, a chip 28 isbonded to the chip 26 between the pillars 25, and the chip 26 is thenjoined to a laminate, e.g., board 32, by the solder cap 24′ (with thechip 28 bonded between the pillars 25).

FIG. 7 shows fabrication processes and a respective structure inaccordance with additional aspects of the invention. In this structure10″, the pillars 25″ can have a concave shape (e.g., hourglass shape),with a larger diameter at both the base and the solder cap 24′,designated at “x” and a narrower section “y” therebetween. Inembodiments, the ratio of x:y can be about 2:1. The shape of the pillars25″ distributes the bump stress more uniformly across the copper pillar25″ while maintaining a large interconnect to both the chip 26 and thelaminate (board) 32. As shown and described with respect to FIG. 5, achip 28 is bonded to the chip 26 between the pillars 25, and the chip 26is then joined to a laminate, e.g., board 32, by the solder cap 24′(with the chip 28 bonded between the pillars 25).

Accordingly, by using the processes and resultant structures describedherein, it is now possible to tailor the shapes of the pillars toaccommodate bending of the pillars, thus relieving stress within thestructure due to CTE mismatch. In addition, the processes described canprovide complex shapes and increase the height to width ratio to about5:1, which is not feasible or even possible with conventional platingprocesses.

The method(s) as described above is used in the fabrication ofintegrated circuit chips. The resulting integrated circuit chips can bedistributed by the fabricator in raw wafer form (that is, as a singlewafer that has multiple unpackaged chips), as a bare die, or in apackaged form. In the latter case the chip is mounted in a single chippackage (such as a plastic carrier, with leads that are affixed to amotherboard or other higher level carrier) or in a multichip package(such as a ceramic carrier that has either or both surfaceinterconnections or buried interconnections). In any case the chip isthen integrated with other chips, discrete circuit elements, and/orother signal processing devices as part of either (a) an intermediateproduct, such as a motherboard, or (b) an end product. The end productcan be any product that includes integrated circuit chips, ranging fromtoys and other low-end applications to advanced computer products havinga display, a keyboard or other input device, and a central processor.

The descriptions of the various embodiments of the present inventionhave been presented for purposes of illustration, but are not intendedto be exhaustive or limited to the embodiments disclosed. Manymodifications and variations will be apparent to those of ordinary skillin the art without departing from the scope and spirit of the describedembodiments. The terminology used herein was chosen to best explain theprinciples of the embodiments, the practical application or technicalimprovement over technologies found in the marketplace, or to enableothers of ordinary skill in the art to understand the embodimentsdisclosed herein.

What is claimed:
 1. A method, comprising: placing a plurality of layerspowder on a wafer; sintering each layer of the powder to form aplurality of pillars directly in contact with the wafer; repeating theplacing and sintering steps until the plurality of pillars reach apredetermined height; forming a solder cap on the plurality of pillars;removing non-sintered powder; joining the wafer to an organic laminateboard using a thermal reflow process; joining a chip to the wafer,between the pillars, by a reflow process; and underfilling empty spacesbetween the chip, the wafer and the board, wherein: dicing the wafer toform a plurality chips with the pillars; bonding a chip without thepillars to a substrate of another chip of the plurality of chips betweenthe pillars; the chip without the pillars including plating ofmicro-bumps; and the organic laminate board is bonded to the anotherchip by the pillars by a reflow of the solder cap.
 2. The method ofclaim 1, wherein: the powder is a copper powder; the solder cap is asolder cap that is formed by a powder deposition followed by a sinteringprocess; and the sintering is a laser sintering process.
 3. The methodof claim 2, wherein the solder cap is reflowed, prior to the joining. 4.The method of claim 1, further comprising removing any non-sinteredpowder from the semiconductor substrate, prior to the joining.
 5. Themethod of claim 1, wherein the predetermined height of the plurality ofpillars is greater than 75 μm.
 6. The method of claim 5, wherein thepredetermined height of the plurality of pillars is about 500 μm.
 7. Themethod of claim 1, wherein a reflow temperature is about 250° C. toabout 260° C.
 8. The method of claim 1, wherein: the removingnon-sintered powder is a cleaning process; and the placing is a coatingof the plurality of layers of the powder, followed by laser sinteringafter each coating to form the pillars directly in contact with thewafer.
 9. The method of claim 1, wherein the plurality of pillars aretapered.
 10. The method of claim 1, wherein the plurality of pillars areshaped as an hourglass.
 11. A method, comprising: coating a wafer with aplurality of layers of conductive powder, followed by a laser sinteringafter each coating to form conductive pillars directly in contact withthe wafer; forming a solder cap, on the conductive pillars; removingnon-sintered powder; joining a chip to the wafer between the conductivepillars; joining the wafer to a board by a bonding process of the soldercap of the conductive pillars to the board; dicing the wafer to form aplurality chips with the conductive pillars; bonding the chip withoutthe conductive pillars to a substrate of another chip of the pluralityof chips between the conductive pillars; the chip without the conductivepillars including plating of micro-bumps; and the chip without theconductive pillars being bonded to the substrate by a reflow process;wherein the board is an organic laminate and the organic laminate isbonded to the another chip by the conductive pillars by a reflow of thesolder cap.
 12. The method of claim 11, wherein the conductive powder iscopper and the solder cap is formed by: deposited solder powder,sintering the solder powder and reflowing the sintered solder powder.13. The method of claim 11, wherein the joining of the chip to the waferis by reflow or thermocompression bonding.
 14. The method of claim 11,wherein the predetermined height is greater than 75 μm.
 15. The methodof claim 14, wherein the predetermined height is approximately 500 um.16. The method of claim 11, further comprising underfilling spacesbetween the chip, wafer and board.
 17. The method of claim 11, whereinthe conductive pillars are shaped as one of (i) cones with its basesbeing wider in diameter than its end at the solder cap, and (ii)hourglasses.
 18. The method of claim 11, wherein the joining the waferto the board is provided by a reflow process.